Very simple compensation technique for bent V-grooves in KOH etched (100) silicon when thin structures or deep etching are required.

Date publication

janvier 2006

Auteurs

Membres identifiés du Cancéropôle Est :
Dr WACOGNE Bruno

Tous les auteurs :
Wacogne B, Zeggari R, Sadani Z, Gharbi T

Résumé

Compensation techniques for producing well-defined bent V-grooves in KOH etched (100) silicon have been widely proposed. However, many of the methods presented in the literature suffer from two drawbacks: the etching depth is supposed to be equal to the V-groove depth and the V-groove must be wide enough for the compensation structures to fit in the pattern. A few solutions have been proposed in order to get round these disadvantages, but they are generally complicated to implement. In this paper, we propose a very simple compensation technique to obtain well-defined structures with any arbitrary etching depth and/or V-groove width. The only condition for the compensation is that the V-groove must be long enough. (C) 2005 Elsevier B.V. All rights reserved.

Référence

Sens Actuator A-phys. 2006 Jan 26;126(1):264-9.