Dissociation of N2 on a Si(111)-7x7 surface at room temperature.
Fiche publication
Date publication
mai 2023
Journal
Chemphyschem : a European journal of chemical physics and physical chemistry
Auteurs
Membres identifiés du Cancéropôle Est :
Dr CHERIOUX Frédéric
Tous les auteurs :
Geagea E, Hamadeh A, Jeannoutot J, Palmino F, Breault N, Rochefort A, Hajjar-Garreau S, Pirri C, Thomas C, Cherioux F
Lien Pubmed
Résumé
We demonstrate that the strong N2 bond can be efficiently dissociated at low pressure and ambient temperature on a Si(111)-7x7 surface. The reaction was experimentally investigated by scanning tunnelling microscopy and X-ray photoemission spectroscopy. Experimental and density functional theory results suggest that relatively low thermal energy collision of N2 with the surface can facilitate electron transfer from the Si(111)-7x7 surface to the p*-antibonding orbitals of N2 that significantly weaken the N2 bond. This facile N2 triple bond dissociation on the surface leads to the formation of a Si3N interface.
Mots clés
Scanning Tunneling Microscopy * Nitrogen activation * Silicon * STM * XPS
Référence
Chemphyschem. 2023 05 12;:e202300182